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Electron Irradiation Induced Trap in N-Type GaN

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Abstract

A 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

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Acknowledgments

We wish to thank T. Cooper for the Hall-effect measurements. The work of Z-Q.F. and D.C.L. was supported by U.S. Air Force Contract No. F33615-95-C-1619. The work of R.J.M was supported by DARPA and the Department of the Air Force. Part of the work was performed at the Avionics Directorate, Wright Laboratory, Wright-Patterson Air Force Base, Ohio, and partial support was received from the Air Force Office of Scientific Research. The MOCVD-GaAs SBD samples were provided by Dr. F. D. Auret of the University of Pretoria, South Africa. Opinions, interpretations, conclusions, and recommendations are those of the authors and are not necessarily endorsed by the U.S. Air Force.

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Authors and Affiliations

  1. Physics Department, Wright State University, Dayton, OH, 45435, USA

    Z-Q. Fang, J. W. Hemsky & D. C. Look

  2. University Research Center, Wright State University, Dayton, OH, 45435, USA

    Z-Q. Fang, D. C. Look & G. D. Via

  3. Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA, 93106, USA

    M. P. Mack

  4. Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA, 02173, USA

    R. J. Molnar

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  1. Z-Q. Fang
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  2. J. W. Hemsky
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  3. D. C. Look
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  4. M. P. Mack
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  5. R. J. Molnar
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  6. G. D. Via
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Fang, ZQ., Hemsky, J.W., Look, D.C. et al. Electron Irradiation Induced Trap in N-Type GaN. MRS Online Proceedings Library 482, 886–891 (1997). https://doi.org/10.1557/PROC-482-881

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  • DOI: https://doi.org/10.1557/PROC-482-881

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