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An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

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Abstract

We deposit hydrogenated amorphous silicon-based thin film transistors using de reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/IOff ratio of 5 x 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

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Acknowledgments

This work was supported through the ARPA AMLCD flat panel display initiative through a subcontract from Intevac and a University Partnership Award from IBM. The authors would like to thank Dr. Verle Aebi and Dr. Gary Davis of Intevac for supplying the ARPA TFT mask set.

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Authors and Affiliations

  1. Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, IL, 61801, USA

    C. S. McCormick, C. E. Weber & J. R. Abelson

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  1. C. S. McCormick
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  2. C. E. Weber
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  3. J. R. Abelson
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McCormick, C.S., Weber, C.E. & Abelson, J.R. An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering. MRS Online Proceedings Library 424, 53–57 (1996). https://doi.org/10.1557/PROC-424-53

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