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Synchrotron Radiation Studies of Platinum Silicide Thin Films

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Abstract

PtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported.

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References

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Acknowledgments

Research at the University of Western Ontario and CSRF is supported by the NSERC of Canada. The NSLS where part of this work was carried out was supported by the U.S. DOE Office of Basic Energy Sciences under Contract No. DE-AC02-76CH00016.

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Authors and Affiliations

  1. Department of Chemistry, The University of Western Ontario, London, Ontario, Canada

    T. K. Sham, S. J. Naftel & A. Bzowski

  2. National Research Council, Institute for Microstructural Science, Ottawa, Canada

    S. R. Das & D.-X. Xu

  3. Pacific Northwest Laboratory, Richland, WA, USA

    S. M. Heald & D. Brewe

  4. Brookhaven National Laboratory, Upton, NY, USA

    M. Kuhn

Authors
  1. T. K. Sham
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  2. S. J. Naftel
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  3. A. Bzowski
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  4. S. R. Das
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  5. D.-X. Xu
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  6. S. M. Heald
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  7. D. Brewe
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  8. M. Kuhn
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Sham, T.K., Naftel, S.J., Bzowski, A. et al. Synchrotron Radiation Studies of Platinum Silicide Thin Films. MRS Online Proceedings Library 402, 587–592 (1995). https://doi.org/10.1557/PROC-402-587

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  • DOI: https://doi.org/10.1557/PROC-402-587

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