Abstract
Two competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSi1-x/Si (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSi1-x/Si (x<0.5) structures grown by UHVCVD and MBE at relatively higher temperatures. A theoretical model has been used to model the critical thickness for surface wave generation. The conditions governing the interplay between dislocation formation and surface buckling are described in terms of a "morphological instability diagram".
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References
Qianghua Xie, N.P. Kobayashi, T.R. Ramachandran, A. Kalburge, P. Chen and A. Madhukar, J. Vac. Sci. Tech B, to appear; also cited by R.A. Metzger, Compound Semiconductor 1 (3), 37 (1995)
J.H. van der Merwe, Crit. Rev. Sol. St. Mat. Sci., 17, 187 (1991).
For a recent review see: D.D. Perovic, Rep. Prog. Phys. (in preparation).
D.D. Perovic and D.C. Houghton, Inst. Phys. Conf. Ser., 146, 117, (1995).
For example, see these proceedings: Mat. Res. Soc. Symp. Proc. Vol. 399 (1996).
M.A. Grinfeld and D.J. Srolovitz, in: Properties of Strained and Relaxed Silicon Germanium, edited by E. Kasper, (Inspec, London, 1995), p.3.
J. Tersoff and F.K. LeGoues, Phys. Rev. Lett., 72, 3570 (1994).
K.M. Chen, D.E. Jesson, S.J. Pennycook, T. Thundat and R.J. Warmack, Phys. Rev. Lett, (to appear).
A. Madhukar, J. Cryst. Growth, (in press).
D.E. Jesson, S.J. Pennycook, J.-M. Baribeau and D.C. Houghton, Phys. Rev. Lett., 71, 1744 (1993); D.E. Jesson, K.M. Chen, S.J. Pennycook, T. Thundat and R.J. Warmack, Science, 268, 1161 (1995).
A.G. Cullis, A.J. Pidduck and M.T. Emeny, Phys. Rev. Lett., 75, 2368 (1995).
D.C. Houghton, D.J. Lockwood, M.W.C. Dharma-wardana, E.W. Fenton, J.-M. Baribeau and M.W. Denhoff, J. Cryst. Growth., 81, 434 (1987).
J.C. Sturm, P.V. Schwartz, E.J. Prinz and H. Manoharan, J. Vac. Sci. Technol., B, 10, 2011 (1992).
B. Meyerson, Proc. I.E.E.E., 80, 1592 (1992).
H. Lafontaine, D.C. Houghton, D. Elliot, N.L. Rowell, J.-M. Baribeau, S. Laframboise, G.I. Sproule and S.J. Rolfe, J. Vac. Sci. Technol. B. (to appear).
D.C. Houghton, J. Appl. Phys., 70, 2136 (1991).
H. Alexander and P. Haasen, Solid State Phys., 22, 27 (1968).
A. Zhao, B.A. Sc. Thesis, University of Toronto, (1993).
D.D. Perovic and D.C. Houghton, Mat. Res. Soc. Symp. Proc., 263, 391 (1992); Phys. Stat. Sol. (a), 138, 425 (1993).
J.-P. Noël, N.L. Rowell, D.C. Houghton, A. Wang and D.D. Perovic, Appl. Phys. Lett., 61, 690 (1992).
N.L. Rowell, J.-P. Noël, D.C. Houghton, A. Wang, L.C. Lenchyshyn, M.L.W. Thewalt and D.D. Perovic, J. Appl. Phys., 74, 2790 (1992).
K.M. Chen, D.E. Jesson, S.J. Pennycook, M. Mostoller, T. Kaplan, T. Thundat and R.J. Warmack, Phys. Rev. Lett., 75, 1582 (1995).
T.J. Gosling and J.R. Willis, J. Mech. Phys. Sol., 42, 1199 (1994).
J.A. Van Vecheten, Handbook on Semiconductors, Vol. 3, edited by T.S. Moss, (Amsterdam, North Holland, 1980), p. 1.
P.M. Fahey, P.B. Griffin and J.D. Plummer, Rev. Mod. Phys., 61, 289 (1989).
J.P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed., Wiley, New York, 1982, p.757.
A.J. Pidduck, D.J. Robbins, A.G. Cullis,W.Y. Leong and A.M. Pitt., Thin Solid Films, 222, 78 (1992).
J.-M. Baribeau, J. Cryst. Growth, (in press).
B.J. Spencer, P.W. Voorhees and S.H. Davis, J. Appl. Phys., 73, 4955 (1993).
M.G. Lagally, Jap. J. Appl. Phys., 32, 1493 (1993).
K.M. Chen, D.E. Jesson, S.J. Pennycook, T. Thundat and R.J. Warmack, (these proceedings).
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Perovic, D., Bahierathan, B., Houghton, D. et al. Strain Relaxation at Low Misfits: Dislocation Injection vs. Surface Roughening. MRS Online Proceedings Library 399, 325 (1995). https://doi.org/10.1557/PROC-399-325
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DOI: https://doi.org/10.1557/PROC-399-325