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High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding

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Abstract

This research addresses silicon nitride dielectrics for a-Si:H TFTs. Si-Si bonds in these films detected by AES have been identified as the major factor that degrades the performance of the TFTs. With no detected Si-Si bonds in the silicon nitride and a relatively low concentration of Si-NH bonds, the TFTs show optimized performance.

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Authors and Affiliations

  1. Department of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695-8202, USA

    S. S. He & G. Lucovsky

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  1. S. S. He
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  2. G. Lucovsky
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He, S.S., Lucovsky, G. High Performance A-Si:H Thin Film Transistors, TFTs: The Importance of Nitride Dielectrics with no Detectable Si-Si Bonding. MRS Online Proceedings Library 336, 787–792 (1994). https://doi.org/10.1557/PROC-336-787

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  • DOI: https://doi.org/10.1557/PROC-336-787

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