Abstract
A low-temperature, 200–300°C, plasma-assisted oxidation-deposition process sequence has been developed for formation of SiO2/Si heterostructures. Adding a nitride layer to form an ON, or ONO composite dielectric, increases the density of trapping states, Dit, at the SiO2/Si interface, unless the entire structure is subjected to a high-temperature rapid thermal anneal, e.g., 30 s at 900°C. By interrupting the nitride deposition, and using on-line Auger electron spectroscopy, AES, the increase in Dit correlates with a migration of N-atoms to the SiO2/Si interface during the nitride deposition. There is no evidence for N-atom incorporation into the oxide layer itself. In contrast, for remote PECVD deposition of oxides onto nitrides, O-atoms react with the nitride, and form an oxy-nitride alloy interfacial region layer.
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Acknowledgments
This research is supported by ONR, the NSF Engineering Research Center for Advanced Electronic Materials Processing, and the North Carolina State University SEMATECH Center of Excellence. We acknowllege the assistance of G.Fountain and R. Alley of Reseach Triangle Institute. Reseach triangle Park, North Carolina.
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He, S.S., Stephens, D.J., Ma, Y. et al. Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices. MRS Online Proceedings Library 262, 653–658 (1992). https://doi.org/10.1557/PROC-262-653
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DOI: https://doi.org/10.1557/PROC-262-653