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A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO2 Interfaces with Low Densities of Interfacial Traps

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Abstract

Device quality SiO2 films have been deposited by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). The substrate surface cleaning, both ex-situ and insitu, influence the density of trapping states at the Si/SiO2 interface. Pre-deposition exposure to plasma-generated atomic-H significantly reduces hydrocarbon and 0 contamination, but damages the Si surface leading to high interface trap densities (Dit) in the Si band-gap. Pre-deposition exposure to plasma generated O-atoms, removes the residual hydrocarbons, and oxidizes the Si substrate while maintaining an atomically smooth interface. Metal Oxide Semiconductor (MOS) structure fabricated by RPECVD have midgap Dit values of ∼1-3X1010cm-2eV-1 for 0-plasma cleaned surface. Final rinse after RCA cleaning in HF solutions with different pH values affects surface morphology; however surface roughening by atomic-H is always the determinant contributor to high values of Dit.

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References

  1. G. Lucovsky, D. V. Tsu, R. A. Rudder, and R. J. Markunas, in “Thin Film Process II”, ed. by J. L. Vossen and W. Kern, Academic Press, 1991

  2. G. G. Fountain, R. A. Rudder, S. V. Hattangady, R. J. Markunas, and P. S. Lindorme, J. Appl. Phys.63(9), 4744 (1988)

    Article  CAS  Google Scholar 

  3. S. S. Kim, D. J. Stephens, G. Lucovsky, G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol.A8, 2039 (1990)

    Article  Google Scholar 

  4. T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett.60(4), 434 (1992)

    Article  CAS  Google Scholar 

  5. Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky, J. Vac. Sci. & Technol.A10 (1992), to be published.

  6. B. Anthony, T. Hsu, L. Breaux, R. Qian, S. Banerjee, and A. Tasch, J. Electronic Materials, 19, 1027 (1990)

    Article  CAS  Google Scholar 

  7. Y. Ma, T Yasuda, S. Habermehl, and G. Lucovsky, MRS Symp. Vol. 236 (1991). to be published.

  8. M. Ishii, K. Nakashima, I. Tajima and M. Yamamota, Appl. Phys. Lett.58, 1378 (1991)

    Article  CAS  Google Scholar 

  9. E. H. Poindexter, G. J. Geradi, M. E. Rueckel, and P. J. Caplan, N. M. Johnson and D. K. Biegelsen, J. Appl. Phys.56, 2844 (1984)

    Article  CAS  Google Scholar 

  10. S. R. Kasi and M. Liehr, Appl. Phys. Lett.57 (20), 2095 (1990)

    Article  CAS  Google Scholar 

  11. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev.B38, 6084 (1988)

    Article  Google Scholar 

  12. G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Appl. Phys. Lett.58 (15), 1656 (1991)

    Article  CAS  Google Scholar 

  13. T. Yasuda, Y. Ma, S. Habermehl, S. S. He, D. Stephens and G. Lucovsky, MRS Symp. Vol 262. to be published.

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Acknowledgement

The authors would like to thank G. Fountain, R. Alley and D. Kelly of Research Triangle Institution of North Carolina for their assistance in Al sputtering, C-V measurement and beneficial discussions. The research is supported by the NSF Engineering Center for Advanced Electronic Material Processing, the Office of Naval Research and SEMATECH Center of Excellence at North Carolina State University.

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Authors and Affiliations

  1. Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-8202, USA

    Y. Ma, T. Yasuda, S. Habermehl, S. S. He, D. J. Stephens & G. Lucovsky

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  1. Y. Ma
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  2. T. Yasuda
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  3. S. Habermehl
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  4. S. S. He
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  5. D. J. Stephens
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  6. G. Lucovsky
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Ma, Y., Yasuda, T., Habermehl, S. et al. A New Two-Step Plasma-Assisted Surface Cleaningoxidation and Film-Deposition Process Sequence for The Formation of Si(100)/SiO2 Interfaces with Low Densities of Interfacial Traps. MRS Online Proceedings Library 259, 69–74 (1992). https://doi.org/10.1557/PROC-259-69

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  • DOI: https://doi.org/10.1557/PROC-259-69

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