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Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System

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This paper describes the key process steps in the low temperature, <300°C, formation of device quality Si/SiO2 interfaces employing oxide deposition by Remote Plasma-Enhanced Chemical Vapor-Deposition (Remote PECVD). The quality of the Si/SiO2 interface correlates with the degree of surface reconstruction that is controlled by ex-situ wet cleaning and in-situ Rapid Flash Heating. Electronic properties of the MOS structure also vary with the deposited oxide thickness, independent of the initial surface quality.

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References

  1. A.C. Adams, Solid State Technology 26, 135 (1983).

    CAS  Google Scholar 

  2. B. Gorowitz, T.B. Gorczyca, and R.J. Saia, Solid State Tecnol. 28(6), 197 (1985).

    CAS  Google Scholar 

  3. H.H. Wieder, AIP Conf. Proc. 138 (AVS Series 1), 230 (1986).

  4. G.G. Fountain, S.V. Hattangady, R.A. Rudder, R.J. Markunas, G. Lucovsky S.S. Kim, and D.V. Tsu, J. Vac. Sci. Technol. A7 (1989).

  5. D.V. Tsu, G.N. Parsons and G. Lucovsky, J. Vac. Sci. Technol. A6, 1849 (1988).

    Article  Google Scholar 

  6. S.S. Kim, D.V. Tsu and G. Lucovsky, J. Vac. Sci. Technol. A6, 1740 (1988).

    Article  Google Scholar 

  7. G. Lucovsky and D.V. Tsu, J. Non-Crrvst. Solids. 97&98, 265 (1987).

    Article  Google Scholar 

  8. G. Lucovsky and D.V. Tsu, J. Vac. Sci. Technol. A5, 2231 (1987).

    Article  Google Scholar 

  9. G. Lucovsky, D.V. Tsu, J.T. Fitch and S.S. Kim, J. Vac. Sci. Technol. A7, (1989)

  10. J. Batey and E. Tierney, J. Appl. Phys. 60, 3136 (1986).

    Article  CAS  Google Scholar 

  11. D.V. Tsu, G.N. Parsons, G. Lucovsky and M.W. Watkins, J. Vac. Sci. Technol. A7, (1989)

  12. S.S. Kim, G.N. Parsons, D.V. Tsu and G.Lucovsky, IEEE Trans. Electron Devices (1989) in press.

  13. S.S. Kim and G. Lucovsky, to be published.

  14. G. Lucovsky, S.S. Kim, D.V. Tsu, G.G. Fountain and R.J. Markunas, J. Vac. Sci. Technol. B7, (1989), in press.

  15. G.N. Parsons, S.S. Kim, and G. Lucovsky, to be published in these MRS Sympo. Proc.

  16. J.F. Wager and C.W. Wilmsen in Physics and Chemistry of III-V Compound Semiconductor Interfaces, (Plenum Press, New York, 1985), Chapter 3 (page 165).

  17. D.J. Vitavage, G.G. Fountain, R.A. Rudder, S.V. Hattangady, and RJ. Markunas, Appl. Phys. Lett. 53(8), 692 (1988).

    Article  Google Scholar 

  18. G.G. Fountain, R.A. Rudder, S.V. Hattangady, RJ. Markunas, and P.S. Lindorme, J. Appl. Phys. 63, 4744 (1988).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. North Carolina State University, Dept. of Physics, 27695, Raleigh, NC, USA

    S. S. Kim, D. V. Tsu & G. Lucovsky

  2. Research Triangle Institute, 27709, Research Triangle Park, NC, USA

    G. G. Fountain & R. J. Markunas

Authors
  1. S. S. Kim
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  2. D. V. Tsu
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  3. G. Lucovsky
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  4. G. G. Fountain
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  5. R. J. Markunas
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Kim, S.S., Tsu, D.V., Lucovsky, G. et al. Formation of Device Quality Si/SiO2 Interfaces in a Multichamber Integrated Processing System. MRS Online Proceedings Library 146, 327–332 (1989). https://doi.org/10.1557/PROC-146-327

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  • DOI: https://doi.org/10.1557/PROC-146-327

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