Abstract
We report solvothermal preparations of nanocrystalline CuIn1-xAlxSe2 materials prepared from the reaction of Se, CuX2 (X = Cl− or stearate), InCl3, and Al(oleate)3 in refluxing oleylamine for 30 minutes to 3 hours. Scanning electron microscopy (SEM) images reveal morphologies consisting of hexagonal plates (100-400 nm diameter) with smaller isomorphic nodules. Micro-Raman spectroscopy, x-ray diffraction, and optical bandgap data are consistent with Al3+ incorporation into the chalcopyrite structure. For aluminum-containing reactions, product Al/(In+Al) ratios are estimated to be between 0.15 and 0.35 regardless of the indium-aluminum stoichiometry employed in the reaction. When Se is added to the reaction last, the reaction pathway involves an early-formed Cu2-xSe(s) intermediate that appears to react with In- and Al-containing species simultaneously. This intermediate is avoided when heating InCl3, Al(oleate)3, and Se together prior to Cu addition, but the final product includes Se contamination that must be removed or reacted by annealing.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M.A. Contreras, K. Ramanathan, J. AbuShama, F. Hasoon, D.L. Young, B. Egass, R. Noufi, Prog. Photovolt. Res. Appl. 13, 209 (2005).
W.N. Shafarman, R. Klenk, B.E. McCandless, J. Appl. Phys. 79, 7324 (1996).
U. Rau, M. Schmidt, A. Jasenek, G. Hanna, H.W. Schock, Sol. Energy Mater. Sol. Cells 67, 137 (2001).
S.-H. Wei, A. Zunger, J. Appl. Phys. 78, 3846 (1995).
S. Marsillac, P.D. Paulson, M.W. Haimbodi, R.W. Birkmire, W.N. Shafarman, Appl. Phys. Lett. 81, 1350 (2002).
Y.B.K. Reddy, V.S. Raja, B. Sreedhar, J. Phys. D.: Appl. Phys. 39, 5124 (2006).
A. Kachouane, E. Halgand, S. Marsillac, J.C. Bernède, Phys. Chem. News 40, 1 (2008).
B. Munir, R.A. Wibowo, E.S. Lee, K.H. Kim, J. Ceram. Process. Res. 8, 252 (2007).
F. Itoh, O. Saitoh, M. Kita, H. Nagamori, H. Oike, Sol. Energy Mater. Sol. Cells 50, 119 (1998).
E. Halgand, J.C. Bernède, S. Marsillac, J. Kessler, Thin Solid Films 480-481, 443 (2005).
S. Jost, F. Hergert, R. Hock, M. Purwins, R. Enderle, Phys Status Solidi A 203, 2581 (2006).
J.H. Yun, R.B.V. Chalapathy, J.C. Lee, J. Song, K.H. Yoon, Diffusion Defect Data – Solid State Data, Pt. B 124-126, 975 (2007).
J. López-García, C. Guillén, Thin Solid Films 517, 2240 (2009).
B. Kavitha, M. Dhanam, Mater. Sci. Eng. B 140, 59 (2007).
Q. Guo, R. Agrawal, H.W. Hillhouse, PCT Int. Appl. WO 2008021604 A2 20080221 (2008).
L. Robinet, M.-C. Corbeil, Stud. Conserv. 48, 23 (2002).
C.L. Exstrom, S.A. Darveau, A.L. Martinez-Skinner, M.A. Ingersoll, J. Olejnicek, A. Mirasano, A.T. Haussler, J.L. Huguenin-Love, C.A. Kamler, M. Diaz, N.J. Ianno, R.J. Soukup, Proc. 33 rd IEEE Photovolt. Spec. Conf., (2008).
C.B. Murray, C.R. Kagan, M.G. Bawendi, Ann. Rev. Mater. Sci. 30, 545 (2000).
E.P. Zaretskaya, V.F. Gremenok, V. Riede, W. Schmitz, K. Bente, V.B. Zalesski, O.V. Ermakov, J. Phys. Chem. Solids 64, 1989 (2003).
J. Weszka, P. Daniel, A.M. Burien, A. Burien, M. Elechower, A.T. Nguyen, J. Non-Crystalline Solids 315, 219 (2003).
W. Gebicki, M. Igalson, W. Zajac, R. Trykozko, J. Phys. D.: Appl. Phys. 23, 964 (1990).
S. Shirakata, H. Miyake, Jpn. J. Appl. Phys. 41, 77 (2002).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Exstrom, C.L., Olejníček, J., Darveau, S.A. et al. Solvothermal Preparation, Processing, and Characterization of Nanocrystalline CuIn1-xAlxSe2 Materials. MRS Online Proceedings Library 1165, 503 (2009). https://doi.org/10.1557/PROC-1165-M05-03
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-1165-M05-03