Abstract
We report a photoluminescence study of near-surface GaN/AlN superlattices grown by metalorganic chemical vapor deposition (MOCVD) on a thick GaN layer. Undoped, Si-doped and Mg-doped structures with the well/barrier thickness ratio 3:1 and different periods are investigated. It is found that the energy position, intensity and linewidth of the emission are determined by the interplay of the built-in polarization field, depletion field and screening by the free carriers. In n-type structures an electron accumulation at the bottom interface is evidenced by the observed recombination of the two-electron gas with the photo-excited holes.
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Paskov, P., Monemar, B., Kamyiama, S. et al. Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices. MRS Online Proceedings Library 955, 1203 (2006). https://doi.org/10.1557/PROC-0955-I12-03
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DOI: https://doi.org/10.1557/PROC-0955-I12-03