Abstract
We have applied an advanced model to analyze the dielectric functions ε = ε1 + iε2 of amorphous silicon-germanium alloys (a-Si1-xGex:H) (i) as a function of alloy content x by varying the flow ratio G = [GeH4]/{[SiH4]+[GeH4]} in plasma-enhanced chemical vapor deposition (PECVD), and (ii) for the first time as a function of the measurement temperature Tm by cooling the newly-deposited film. All ε spectra (1.5 – 4.5 eV) have been measured by spectroscopic ellipsometry (SE) either in real time during deposition or in situ post-deposition in order to avoid surface contamination. From the resulting extensive database, the optical properties of the alloys can be predicted for any value x and Tm within the ranges of the database. Such a capability is expected to be useful, for example, in real time control of optical gap in the PECVD process and in predicting the quantum efficiency of multijunction a-Si:H-based solar cells versus operating temperature. The effect on the database of other deposition parameters such as the electrode configuration and the H2-dilution ratio R = [H2]/{[SiH4]+ [GeH4]} have also been explored. The latter two studies provide useful insights into materials properties that can be extracted from a single spectroscopic measurement performed in real time during PECVD. For example, the energy width of the resonance in ε correlates closely with the precursor surface diffusion characteristics observed throughout growth -- both determined from real time SE. This result indicates that short-range ordering in the film is improved when surface diffusion is promoted.
Similar content being viewed by others
References
A.S. Ferlauto, G.M. Ferreira, J.M. Pearce, C.R. Wronski, R.W. Collins, X. Deng, and G. Ganguly, J. Appl. Phys. 92, 2424 (2002).
R.W. Collins, A.S. Ferlauto, G.M. Ferreira, C. Chen, J. Koh, R. Koval, Y. Lee, J.M. Pearce, and C.R. Wronski, Solar Energy Mater. Solar Cells 78, 143 (2003).
X. Deng and E.A. Schiff, in: Handbook of Photovoltaic Science and Engineering, edited by A. Luque and S. Hegedus (Wiley, New York, 2003), p. 505.
N.J. Podraza, G.M. Ferreira, C.R. Wronski, and R.W. Collins, Mater. Res. Soc. Symp. Proc. 862, 43 (2005).
P. Lautenschlager, M. Garriga, L. Viña, and M. Cardona, Phys. Rev. B 36, 4821 (1987).
G.D. Cody, in: Semiconductors and Semimetals, Vol. 21B, edited by J.I. Pankove, Academic, New York (1984), p. 11.
R.M. Dawson, Y.M. Li, M. Gunes, D. Heller, S. Nag, R.W. Collins, C.R. Wronski, M. Bennett, and Y.-M. Li, Mater. Res. Soc. Symp. Proc. 258, 595 (1992).
G.E. Jellison, Jr., and F.A. Modine, Appl. Phys. Lett. 69, 371 (1996); 69, 2137 (1996).
J. Price, P.Y. Hung, T. Rhoad, B. Foran , and A.C. Diebold, Appl. Phys. Lett. 85, 1701 (2004).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Podraza, N.J., Wronski, C.R., Horn, M.W. et al. Dielectric Functions of a-Si1-xGex:H versus Ge Content, Temperature, and Processing: Advances in Optical Function Parameterization. MRS Online Proceedings Library 910, 1001 (2005). https://doi.org/10.1557/PROC-0910-A10-01
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-0910-A10-01