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Laser Terahertz Emission Spectroscopy of Graphene/InAs Junctions

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Abstract

We applied laser THz emission spectroscopy to study the effects of monolayer graphene on the THz emission from InAs. THz emission from graphene/InAs varies linearly with the laser excitation power in the low-intensity excitation regime. We found that unlike in graphene/SI-InP junctions, graphene and O2 adsorbates on graphene have no significant effect on the THz emission from graphene/InAs junctions because the THz radiation mechanism in InAs is by the photo-Dember effect, whereas for SI-InP is by the surge current effect. There is also a slight enhancement in the THz emission from both bare InAs and graphene/InAs by UV illumination, which is probably due to the additional photoexcited carriers by UV that somehow enhances the photo-Dember field.

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Authors and Affiliations

  1. Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, 565-0871, Suita, Osaka, Japan

    Filchito Renee Bagsican, Jofferson Gonzales, Iwao Kawayama, Hironaru Murakami & Masayoshi Tonouchi

  2. Department of Materials Science and NanoEngineering, Rice University, Houston, 77005, Texas, USA

    Xiang Zhang, Lulu Ma, Robert Vajtai & Pulickel Ajayan

  3. Department of Electrical and Computer Engineering, Rice University, 77005, Houston, Texas, USA

    Junichiro Kono

  4. Department of Physics & Astronomy, Rice University, 77005, Houston, Texas, USA

    Junichiro Kono

Authors
  1. Filchito Renee Bagsican
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  2. Jofferson Gonzales
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  3. Xiang Zhang
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  4. Lulu Ma
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  5. Iwao Kawayama
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  6. Hironaru Murakami
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  7. Robert Vajtai
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  8. Pulickel Ajayan
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  9. Junichiro Kono
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  10. Masayoshi Tonouchi
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Bagsican, F.R., Gonzales, J., Zhang, X. et al. Laser Terahertz Emission Spectroscopy of Graphene/InAs Junctions. MRS Online Proceedings Library 1808, 1–7 (2015). https://doi.org/10.1557/opl.2015.639

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  • DOI: https://doi.org/10.1557/opl.2015.639

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