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Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

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Abstract

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

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Authors and Affiliations

  1. Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway

    Karina B. Klepper, Ville Miikkulainen, Ola Nilsen & Helmer Fjellvåg

  2. Department of Physics, University of Michigan, Ann Arbor, MI, USA

    Ming Liu, Dhanadeep Dutta & David Gidley

  3. Department of Physics, University of Albany, Albany, NY, USA

    William Lanford

  4. Logic Technology Development, Intel Corporation, Hillsboro, OR, USA

    Liza Ross, Han Li & Sean W. King

Authors
  1. Karina B. Klepper
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  2. Ville Miikkulainen
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  3. Ola Nilsen
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  4. Helmer Fjellvåg
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  5. Ming Liu
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  6. Dhanadeep Dutta
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  7. David Gidley
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  8. William Lanford
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  9. Liza Ross
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  10. Han Li
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  11. Sean W. King
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Klepper, K.B., Miikkulainen, V., Nilsen, O. et al. Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials. MRS Online Proceedings Library 1791, 15–20 (2015). https://doi.org/10.1557/opl.2015.519

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