Abstract
Elastic engineering strain has been regarded as a low-cost and continuously variable manner for altering the physical and chemical properties of materials, and it becomes even more important at low-dimensionality because at micro/nanoscale, materials/structures can usually bear exceptionally high elastic strains before failure. The elastic strain effects are therefore greatly magnified in micro/nanoscale structures and should be of great potential in the design of novel functional devices. The purpose of this overview is to present a summary of our recently progress in the energy band engineering of elastically bent ZnO micro/nanowires. First, we present the electronic and mechanical coupling effect in bent ZnO nanowires. Second, we summary the bending strain gradient effect on the near-band-edge (NBE) emission photon energy of bent ZnO micro/nanowires. Third, we show that the strain can induce exciton fine-structure splitting and shift in ZnO microwires. Our recent progresses illustrate that the electronic band structure of ZnO micro/nanowires can be dramatically tuned by elastic strain engineering, and point to potential future applications based on the elastic strain engineering of ZnO micro/nanowires.
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acknowledgments
This work is supported by NSFC (Grant No. 11174009, 11234001), the National 973 Programs of China (2013CB921900, 2012CB619402). The authors are also grateful to the financial support from the Sino-Swiss Science and Technology Cooperation Program (2010DFA01810), and NSFC/RGC (N HKUST615/06). We thank Prof. Wanlin Guo for useful discussions, and Dr. Jun Xu for experimental help.
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Fu, X., Liao, Z. & Yu, D. Electronic and Mechanical Coupling in Elastically Bent ZnO Micro/Nanowires. MRS Online Proceedings Library 1664, 1–6 (2014). https://doi.org/10.1557/opl.2014.324
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DOI: https://doi.org/10.1557/opl.2014.324