Abstract
Molecular dynamics (MD) simulations are carried out to understand the mechanisms of damage production and recovery near grain boundaries in β-SiC under neutron irradiation. Our investigations show that the damage generated by radiation is reduced by the presence of a ∑9{122}[110] tilt grain boundary. Directional displacements which are averaged over an isoconfigurational ensemble are used to characterize the statistical nature of atomic mobility near the grain boundary.
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Nandi, P.K., Annamareddy, V.A. & Eapen, J. Role of CSL Boundaries on Displacement Cascades in β-SiC. MRS Online Proceedings Library 1514, 43 (2013). https://doi.org/10.1557/opl.2013.61
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DOI: https://doi.org/10.1557/opl.2013.61