Abstract
We present comprehensive quantitative analysis of Raman spectra in two-(Si/SiGe superlattices) and three-(Si/SiGe cluster multilayers) dimensional nanostructures. We find that the Raman spectra baseline is due to the sample surface imperfection and instrumental response associated with the stray light. The Raman signal intensity is analyzed, and Ge composition is calculated and compared with the experimental data. The local sample temperature and thermal conductivity are calculated, and the spectrum of longitudinal acoustic phonons is explained.
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Mala, S., Tsybeskov, L., Baribeau, JM. et al. Quantitative Analysis of Raman Spectra in Si/SiGe Nanostructures. MRS Online Proceedings Library 1510, 1 (2013). https://doi.org/10.1557/opl.2013.271
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DOI: https://doi.org/10.1557/opl.2013.271