Abstract
Emerging NVM devices have been extensively studied as candidates to extend density scaling and power reduction beyond Si-based flash. Recently, resistive-random-access-memory (ReRAM) devices in the form of metal-insulator-metal (MIM) structures have attracted substantial attention due to their potential scalability, low power operation, and high speed. HfO2 is attractive compared to other transition metal oxides from the vantage point of CMOS process compatibility. Here, we investigate doped HfO2 with a Pt top electrode on an n+-Si substrate. By doping HfO2 with Hf or Au, improved resistive switching properties have been demonstrated in terms of enhanced cycling endurance and lower switching voltages for SET and RESET. The improvements were attributed to doping-induced oxygen vacancies. In addition, Cu-doped HfO2 devices have exhibited multilevel resistive switching.
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Acknowledgments
This work is partially supported by NSF (grant No. 0829824), SRC FCRP through IFC, International SEMATECH, AFRL (grant No. FA8750-10-1-0138) and IBM research grants.
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He, X., Tokranova, N.A., Wang, W. et al. Improved Resistive Switching Properties in HfO2-based ReRAMs by Hf/Au Doping. MRS Online Proceedings Library 1394, 81–86 (2012). https://doi.org/10.1557/opl.2012.530
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DOI: https://doi.org/10.1557/opl.2012.530