Abstract
We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate, bottom contact field-effect transistors (FETs.) Because of the buried metal layer effect the maximum response, due to absorption in the charge layer, will be for a dielectric film ∼ 1/4 of a wavelength (in the dielectric) (e.g. ∼ 1 micron thick in the infrared.) Results are presented for FETs prepared with both spin-cast polymer and alumina dielectrics prepared by atomic layer deposition. At low frequencies the results are fit to solutions to a non-linear differential equation describing the spatial dependence of flowing charge in the FET channel, which allows us to study multiple crystals forming across one set of drain-source contacts. FETs prepared on alumina dielectrics show interesting deviations from the model at high frequencies, possibly due to increased contact impedance.
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Emily, G.B., Joseph, W.B. & Joseph, P.S. Dynamic Infrared Electro-optic Response of Soluble Organic Semiconductors in Thin Film Transistors. MRS Online Proceedings Library 1501, >1215010609 (2012). https://doi.org/10.1557/opl.2012.1744
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DOI: https://doi.org/10.1557/opl.2012.1744