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Large-area Metrology of CVD-grown Graphene Layers on Copper Foil Substrates

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Abstract

Fluorescence Quenching Microscopy has been shown to be an effective means of characterizing graphene on the macroscale. Centimeter-scale CVD-grown pristine and doped graphene were manufactured in a high temperature (1000°C) furnace on pristine copper substrates. The copper was then etched away in a FeCl3solution and the graphene was coated with DCM-based fluorescent dye before being imaged in a fluorescence microscope. The fluorescence image was then image-processed using modified Matlab software. The resulting image showed clear contrast between the pristine graphene sheet and defects on the graphene surface, which revealed that fluorescence microscopy could determine the quality of a large region of graphene. Also, significant contrast was identified between single-layer and multi-layer regions, showing that this technique is also effective at determining the degree of uniformity within a graphene sample. Lastly, the fluorescence images showed contrast between doped and undoped regions of graphene.

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Acknowledgments

We gratefully acknowledge financial support for this work by the Riverside Public Utilities, the CMMI Division of the National Science Foundation (Award: 0800680), the Materials Research Science and Engineering Center (NSF-MRSEC) on Polymers (Award: 0213695), the Winston Chung Global Energy Center at UCR, and the Nanoscale Science and Engineering Center (NSFNSEC) on hierarchical manufacturing (CHM, Award: 0531171).

The authors would also like to thank Dr. David Carter of the Center for Plant Cell Biology at the University of California Riverside for use of the Pathway fluorescence microscope and for useful help in solving a lot of the problems associated with montage-imaging of large-area graphene.

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Pleskot, D.L., Kyle, J.R., Ghazinejad, M. et al. Large-area Metrology of CVD-grown Graphene Layers on Copper Foil Substrates. MRS Online Proceedings Library 1451, 45–49 (2012). https://doi.org/10.1557/opl.2012.1332

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  • DOI: https://doi.org/10.1557/opl.2012.1332

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