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The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon

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Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm2/V·s to 42.5 cm2/V·s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

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Authors and Affiliations

  1. The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Institute of Photo-Electronics, Nankai University, 300071, Tianjin, PR, China

    Chong Luo, Juan Li, He Li, Zhiguo Meng, Qian Huang, Shengzhi Xu & Shaozhen Xiong

  2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China

    He Li & Hoi Sing Kwok

Authors
  1. Chong Luo
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  2. Juan Li
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  3. He Li
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  4. Zhiguo Meng
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  5. Qian Huang
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  6. Shengzhi Xu
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  7. Hoi Sing Kwok
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  8. Shaozhen Xiong
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Correspondence to Shaozhen Xiong.

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Luo, C., Li, J., Li, H. et al. The Role of H-Plasma in Aluminum Induced Crystallization of Amorphous Silicon. MRS Online Proceedings Library 1321, 607 (2011). https://doi.org/10.1557/opl.2011.1249

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