Abstract
A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.
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Acknowledgments
This research was supported by the Air Force Office of Scientific Research (Grant No. FA9550-12-1-0074), the National Science Foundation (Grant No. 1638163), and the Ministry of Science and Technology of China (Grant No. 0102014DFA52030).
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Liang, J., Tong, K., Sun, H. et al. Intrinsically stretchable field-effect transistors. MRS Bulletin 42, 131–137 (2017). https://doi.org/10.1557/mrs.2016.326
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DOI: https://doi.org/10.1557/mrs.2016.326