Abstract
Solution-processed metal oxide electronics on flexible substrates can enable applications from military to health care. Due to limited thermal budgets and mismatched coefficients of thermal expansion between oxides and substrates, achieving good performance in solution-processed oxide films remains a challenge. Additionally, the use of traditional photolithographic processes is incompatible with low-cost, high-throughput roll-to-roll processing. Here, we demonstrate solution-deposited oxide thin film transistors (TFTs) on a shape memory polymer substrate, which offers unique control of final device shape and modulus. The key enabling step is the exposure of the precursor film to UV-ozone through a shadow mask to perform patterning and photochemical conversion simultaneously. These TFTs exhibit mobility up to 160 cm2/(V s), subthreshold swing as low as 110 mV/dec, and threshold voltage between −2 and 0 V, while maintaining compatibility with a flexible form factor at processing temperatures below 250 °C.
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Y. Khan, A.E. Ostfeld, C.M. Lochner, A. Pierre, and A.C. Arias: Monitoring of vital signs with flexible and wearable medical devices. Adv. Mater. 28, 4373 (2016).
M.C. Choi, Y. Kim, and C.S. Ha: Polymers for flexible displays: From material selection to device applications. Prog. Polym. Sci. 33, 581 (2008).
Q. Zhao, H.J. Qi, and T. Xie: Recent progress in shape memory polymer: New behavior, enabling materials, and mechanistic understanding. Prog. Polym. Sci. 49–50, 79 (2015).
T. Ware, D. Simon, K. Hearon, C. Liu, S. Shah, J. Reeder, N. Khodaparast, M.P. Kilgard, D.J. Maitland, R.L. Rennaker, and W.E. Voit: Three-dimensional flexible electronics enabled by shape memory polymer substrates for responsive neural interfaces. Macromol. Mater. Eng. 297, 1193 (2012).
J. Reeder, M. Kaltenbrunner, T. Ware, D. Arreaga-Salas, A. Avendano-Bolivar, T. Yokota, Y. Inoue, M. Sekino, W. Voit, T. Sekitani, and T. Someya: Mechanically adaptive organic transistors for implantable electronics. Adv. Mater. 26, 4967 (2014).
G. Gutierrez-Heredia, O. Rodriguez-Lopez, A. Garcia-Sandoval, and W.E. Voit: Highly stable indium–gallium–zinc–oxide thin-film transistors on deformable softening polymer substrates. Adv. Electron. Mater. 3, 1700221 (2017).
W.A. MacDonald: Engineered films for display technologies. J. Mater. Chem. 14, 4 (2004).
W. Voit, T. Ware, R.R. Dasari, P. Smith, L. Danz, D. Simon, S. Barlow, S.R. Marder, and K. Gall: High-strain shape-memory polymers. Adv. Funct. Mater. 20, 162 (2010).
Q. Fu, C-B. Cao, and H-S. Zhu: Preparation of alumina films from a new sol–gel route. Thin Solid Films 348, 99 (1999).
S.J. Heo, D.H. Yoon, T.S. Jung, and H.J. Kim: Recent advances in low-temperature solution-processed oxide backplanes. J. Inf. Disp. 14, 79 (2013).
C.J. Brinker and G.W. Scherer: Sol–Gel Science: The Physics and Chemistry of Sol–Gel Processing (Academic Press, Cambridge, MA, 1990); p. 68.
A. Liu, H. Zhu, Z. Guo, Y. Meng, and G. Liu: Solution combustion synthesis: Low-temperature processing for p-type Cu:NiO thin films for transparent electronics. Adv. Mater. 29, 1701599 (2017).
M-G. Kim, M.G. Kanatzidis, A. Facchetti, and T.J. Marks: Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. Nat. Mater. 10, 382 (2011).
B. Wang, X. Yu, P. Guo, W. Huang, L. Zeng, N. Zhou, L. Chi, M.J. Bedzyk, R.P.H. Chang, T.J. Marks, and A. Facchetti: Solution-processed all-oxide transparent high-performance transistors fabricated by spray-combustion synthesis. Adv. Electron. Mater. 2, 1500427 (2016).
K. Tetzner, Y.H. Lin, A. Regoutz, A. Seitkhan, D.J. Payne, and T.D. Anthopoulos: Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp. J. Mater. Chem. C 5, 11724 (2017).
Y-H. Kim, J-S. Heo, T-H. Kim, S. Park, M-H. Yoon, J. Kim, M.S. Oh, G-R. Yi, Y-Y. Noh, and S.K. Park: Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films. Nature 489, 128 (2012).
Y.H. Hwang, S-J. Seo, J-H. Jeon, and B-S. Bae: Ultraviolet photo-annealing process for low temperature processed sol–gel zinc tin oxide thin film transistors. Electrochem. Solid-State Lett. 15, H91 (2012).
S. Dellis, I. Isakov, N. Kalfagiannis, and K. Tetzner: Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors. J. Mater. Chem. C 5, 3673 (2017).
T. Jun, K. Song, Y. Jeong, K. Woo, D. Kim, C. Bae, and J. Moon: High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing. J. Mater. Chem. 21, 1102 (2011).
S. Park, K-H. Kim, J-W. Jo, S. Sung, K-T. Kim, W-J. Lee, J. Kim, H.J. Kim, G-R. Yi, Y-H. Kim, M-H. Yoon, and S.K. Park: In-depth studies on rapid photochemical activation of various sol-gel metal oxide films for flexible transparent electronics. Adv. Funct. Mater. 25, 2807 (2015).
Y.M. Park, A. Desai, A. Salleo, and L. Jimison: Solution-processable zirconium oxide gate dielectrics for flexible organic field effect transistors operated at low voltages. Chem. Mater. 25, 2571 (2013).
T. Ware, D. Simon, D.E. Arreaga-Salas, J. Reeder, R. Rennaker, E.W. Keefer, and W. Voit: Fabrication of responsive, softening neural interfaces. Adv. Funct. Mater. 22, 3470 (2012).
T.B. Daunis, G. Gutierrez-Heredia, O. Rodriguez-Lopez, J. Wang, W.E. Voit, and J.W.P. Hsu: Solution-deposited Al2O3 dielectric towards fully-patterned thin film transistors on shape memory polymer. Proc. SPIE 10105, 101051Z (2017).
D.H. Lee, Y.J. Chang, and G.S. Herman: A general route to printable high-mobility transparent amorphous oxide semiconductors. Adv. Mater. 19, 843 (2007).
Y.S. Rim, H. Chen, Y. Liu, S-H. Bae, H.J. Kim, and Y. Yang: Direct light pattern integration of low-temperature solution-processed all-oxide flexible electronics. ACS Appl. Mater. Interfaces 8, 9680 (2014).
J-W. Jo, J. Kim, K-T. Kim, J-G. Kang, M-G. Kim, K-H. Kim, H. Ko, Y-H. Kim, and S.K. Park: Highly stable and imperceptible electronics utilizing photoactivated heterogeneous sol–gel metal-oxide dielectrics and semiconductors. Adv. Mater. 27, 1182 (2015).
F. Honda and K. Hirokawa: X-ray photoelectron spectroscopic observation of nitrogen-containing gases adsorbed at high pressures on some transition metals. J. Electron Spectrosc. Relat. Phenom. 10, 125 (1977).
J. Baltrusaitis, P.M. Jayaweera, and V.H. Grassian: XPS study of nitrogen dioxide adsorption on metal oxide particle surfaces under different environmental conditions. Phys. Chem. Chem. Phys. 11, 8295 (2009).
J. Hwang, K. Lee, Y. Jeong, Y.U. Lee, C. Pearson, M.C. Petty, and H. Kim: UV-assisted low temperature oxide dielectric films for TFT applications. Adv. Mater. Interfaces 1, 1400206 (2014).
X. Yu, J. Smith, N. Zhou, L. Zeng, P. Guo, Y. Xia, A. Alvarez, S. Aghion, H. Lin, J. Yu, R.P.H. Chang, M.J. Bedzyk, R. Ferragut, T.J. Marks, and A. Facchetti: Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors. Proc. Natl. Acad. Sci. U. S. A. 112, 3217 (2015).
S. Sanctis, R.C. Hoffmann, M. Bruns, and J.J. Schneider: Direct photopatterning of solution-processed amorphous indium zinc oxide and zinc tin oxide semiconductors—A chimie douce molecular precursor approach to thin film electronic oxides. Adv. Mater. Interfaces 5, 1800324 (2018).
P.K. Nayak, M.N. Hedhili, D. Cha, and H.N. Alshareef: High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric. Appl. Phys. Lett. 103, 033518 (2013).
Y. Xu, X. Li, L. Zhu, and J. Zhang: Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing. Mater. Sci. Semicond. Process. 46, 23 (2016).
W. Xu, H. Wang, F. Xie, J. Chen, H. Cao, and J-B. Xu: Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors. ACS Appl. Mater. Interfaces 7, 5803 (2015).
Y. Zhang, G. Huang, L. Duan, G. Dong, D. Zhang, and Y. Qiu: Full-solution-processed high mobility zinc-tin-oxide thin-film-transistors. Sci. China: Technol. Sci. 59, 1407 (2016).
A. Liu, H. Zhu, H. Sun, Y. Xu, and Y-Y. Noh: Solution processed metal oxide high-κ dielectrics for emerging transistors and circuits. Adv. Mater. 30, 1706364 (2018).
ACKNOWLEDGMENTS
The authors thank Dr. Robert Wallace for the use of the spectroscopic ellipsometer, Michael Womble for assistance in XRD measurements, and Sean Dillon and James Tran for help in FTIR measurements. This work is supported in part by the Center for Engineering Innovation and by SPARC. W.V. acknowledges support from the DARPA Young Faculty Award and DARPA Director’s Fellowship (No. D13AP00049). J.W.P.H. acknowledges the support from Texas Instruments Distinguished Chair in Nanoelectronics.
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Daunis, T.B., Barrera, D., Gutierrez-Heredia, G. et al. Solution-processed oxide thin film transistors on shape memory polymer enabled by photochemical self-patterning. Journal of Materials Research 33, 2454–2462 (2018). https://doi.org/10.1557/jmr.2018.296
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DOI: https://doi.org/10.1557/jmr.2018.296