Abstract
Carbon–nitrogen compounds have attracted enormous attention because of their unusual physical properties and fascinating applications on various devices. Especially in two-dimension, doping of nitrogen atoms in graphene is widely believed to be an effective mechanism to improve the electronic and optoelectronic performances of graphene. In this work, using the first-principles calculations, we systematically investigate the electronic, mechanical, and optical properties of monolayer C3N, a newly synthesized two-dimensional carbon-graphene crystal. The useful results we obtained are: (i) monolayer C3N is an indirect band-gap semiconductor with the gap of 1.042 eV calculated by the accurate hybrid functional; (ii) compared with graphene, it has smaller ideal tensile strength but larger in-plane stiffness; (iii) the nonlinear effect of elasticity at large strains is more remarkable in monolayer C3N; (iv) monolayer C3N exhibits main absorption peak in visible light region and secondary peak in ultraviolet region, and the absorbing ratio between them can be effectively mediated by strain.
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ACKNOWLEDGMENTS
This work was supported by the NSF of China (Grant Nos. 11374033 and 11574029), the MOST Project of China (Grant Nos. 2014CB920903 and 2016YFA0300600), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131101120052).
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Zhou, X., Feng, W., Guan, S. et al. Computational characterization of monolayer C3N: A two-dimensional nitrogen-graphene crystal. Journal of Materials Research 32, 2993–3001 (2017). https://doi.org/10.1557/jmr.2017.228
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DOI: https://doi.org/10.1557/jmr.2017.228