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Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

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Abstract

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.

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ACKNOWLEDGMENTS

This work was supported in part by the Office of Naval Research (ONR), and the Army Research Office (ARO). M.V. and S.K.B. acknowledge support from the NASCENT NSF Engineering Research Center (ERC). The authors would also like to thank Dr. Di Wu and Prof. Keji Lai (Department of Physics, UT Austin).

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Authors and Affiliations

  1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, 78758, USA

    Rudresh Ghosh, Joon-Seok Kim, Anupam Roy, Harry Chou, Mary Vu, Sanjay K. Banerjee & Deji Akinwande

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  1. Rudresh Ghosh
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  2. Joon-Seok Kim
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  3. Anupam Roy
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  4. Harry Chou
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  5. Mary Vu
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  6. Sanjay K. Banerjee
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  7. Deji Akinwande
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Correspondence to Rudresh Ghosh.

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Ghosh, R., Kim, JS., Roy, A. et al. Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2. Journal of Materials Research 31, 917–922 (2016). https://doi.org/10.1557/jmr.2016.7

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