Abstract
Using transmission electron microscopy we observe the dissociation of 60° misfit dislocations at the interface of SiGe/Si multilayers, extending into the substrate for distances of 5.0–7.5 nm. Analysis using elasticity theory shows that this dissociationis the equilibrium configuration for individual 60° misfit dislocations, as it is for 60° mixed dislocations in bulk Si, and that the compressively strained multilayer film serves mainly to position the partial dislocations and stacking fault with respect to the free surface. We observe both undissociated 60° and Lomer edge dislocations after annealing, and conclude that these result from dislocation climb in the interface. Since the dislocations move off their slip plane during climb, they cannot remain dissociated. Significant climb and Lomer dislocation formation for these low misfit layers is observed at temperatures above 850 °C and for samples with a high initial dislocation density, such as found in thicker as-grown samples. The dislocation configuration formed during annealing is distinct from that reported to form during growth of higher mismatch films: the Lomer dislocations tend to be segmented, with the segments connected by perfect 60° dislocations.
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References
R. Hull and E. Stach: in Thin Films: Heteroepitaxial Systems, edited by W.K. Liu and M.B. Santos (World Scientific, River Edge, NJ, 1999), pp. 299–367.
F.K. LeGoues: The effect of strain on the formation of dislocations at the SiGe/Si interface, MRS Bull. 21 (4),38 (1996).
P.M.J. Maree, J.C. Barbour, van der J.F. Veen, K.L. Kavanagh, C.W. Bulle-LieuwmaT. and M.P.A. Viegers: Generation of misfit dislocations in semiconductors, J. Appl. Phys. 62, 4413 (1987).
R. Hull, J.C. Bean, L.J. Peticolas, D. Bahnck, B.E. Weir and L.C. Feldman: Quantitative analysis of strain relaxation in GexSi1-x/Si(110) heterostructures and an accurate determination of stacking fault energy in Gex Si1-x alloys, Appl. Phys. Lett. 61, 2802 (1992).
De B.C. Cooman, C.B. Carter, K.T. Chan and J.R. Shealy: The characterization of misfit dislocations at 100 heterojunctions in III-V compound semiconductors, Acta Metall. 37, 2779 (1989).
J. Zou and D.J.H. Cockayne: Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructures, Appl. Phys. Lett. 63, 2222 (1993).
Y. Chen, N.D. Zakharov, P. Werner, Z. Liliental-Wever, J. Washburn, J.F. Klem and J.Y. Tsao: Dislocation formation mechanism in strained InxGa1-xAs islands grown on GaAs(001) substrates, Appl. Phys. Lett. 62, 1536 (1993).
R. Hull: Misfit strain and accommodation in SiGe heterostructures, in Semiconductors and Semimetals, 56, (1999).
P.E. Batson: Atomic and electronic structure of a dissociated 60° misfit disloction in Gex Si(1-x), Phys. Rev. Lett. 83, 4409 (1999).
P.E. Batson: Structural and electronic characterization of a dissociated 60° dislocation in GeSi, Phys. Rev. B 61, 16633 (2000).
P. Shum Kai, M. Mooney and J.O. Chu: Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si, Appl. Phys. Lett. 71, 1074 (1997).
S. Lopatin, S.J. Pennycook, J. Narayan and G. Duscher: Z-contrast imaging of dislocation cores at the GaAs/Si interface, Appl. Phys. Lett. 81, 2728 (2002).
W.M. Lomer: A dislocation reaction in the face-centred cubic lattice, Philos. Mag. 42, 1327 (1951).
A.F. Schwartzman and R. Sinclair: Metastable and equilibrium defect structure of II-IV GaAs interfaces, J. Electron. Mater. 20, 805 (1991).
J. Narayan and S. Sharan: Mechanism of formation of 60° and 90° misfit dislocations in semiconductor heterostructures, Mater. Sci. Eng. B 10, 261 (1991).
S. Oktyabrsky, H. Wu, R.D. Vispute and J. Narayan: Misfit dislocations in low-temperature grown Ge/Si heterostructures, Philos. Mag. A 71, 537 (1995).
R. Hull and J.C. Bean: Nucleation of misfit dislocations in strained-layer epitaxy in the Gex Si1-x system, J. Vac. Sci. Technol. A 7, 2580 (1989).
K.H. Chang, P.K. Bhattacharya and R. Gibala: Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces, J. Appl. Phys. 66, 2993 (1989).
E.P. Kvam, D.M. Maher and C.J. Humphreys: Variation of dislocation morphology with strain in GexSi1-x epilayers on (100), J. Mater. Res. 5, 1900 (1990).
J. Narayan and S. Oktyabrsky: Formation of misfit dislocations in thin film heterostructures, J. Appl. Phys. 92, 7122 (2002).
S.J. Pennycook, M.M. McGibbon, A.J. McGibbon, D.E. Jesson and M.F. Chisholm: Direct determination of interface structure and bonding with the scanning transmission electron microscope, Philos. Trans. R. Soc. London A 354, 1719 (1996).
D. Wang, H. Chen, F.J. Li, K. Kawasaki and T. Oikawa: Atomic configuration in core structure of Lomer dislocation in Si0.76Ge0.24/Si, Ultramicroscopy 93, 139 (2002).
D.B. Aubertine, M.A. Mander, N. Ozguven, A.F. Marshall, P.C. McIntyre, J.O. Chu and P.M. Mooney: Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers, J. Appl. Phys. 92, 5027 (2002).
J.P. Hirth and J. Lothe: Theory of Dislocations (Wiley, New York, 1982), pp. 91, 117, 319.
I.L.F. Ray and D.J.H. Cockayne: The dissociation of dislocations in silicon, Proc. R. Soc. London A 325, 543 (1971).
J. Zou and D.J.H. Cockayne: Lomer-Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures, App. Phys. Lett. 69, 1083 (1996).
A.J. Cottrell: The formation of immobile dislocations during slip, Philos. Mag. 43, 645 (1952).
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Marshall, A.F., Aubertine, D.B., Nix, W.D. et al. Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures. Journal of Materials Research 20, 447–455 (2005). https://doi.org/10.1557/JMR.2005.0065
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DOI: https://doi.org/10.1557/JMR.2005.0065