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Transition from brittle fracture to ductile behavior in 4H–SiC

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Abstract

The four-point bend test was used to measure the brittle-to-ductile transition (BDT) temperature in precracked samples of semi-insulating 4H—SiC at four different strain rates. As in other semiconductors, the BDT temperature TBDT was found to be very sharp, within ±15 °C, and to shift to higher temperatures with increasing rates of the applied load (or strain rate). The results appear to be consistent with a transition temperature Tc recently observed in the yield stress of the same material as measured by compression experiments. However, strain-rate measurements in four-point bend tests are not strictly equivalent to those in compression experiments, and therefore it is difficult to directly compare the measured BDT temperatures with the yield stress transitions. Nevertheless, it is believed that the reasonable agreement between TBDT and Tc supports the model recently proposed to explain these transition temperatures.

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References

  1. A. George and J. Rabier, Rev. Phys. Appl. 22, 941 (1987).

    Article  CAS  Google Scholar 

  2. J. Rabier and A. George, Rev. Phys. Appl. 22, 1327 (1987).

    Article  CAS  Google Scholar 

  3. J. Castaing, P. Veyssière, L.P. Kubin, J. Rabier, Philos. Mag. A 44, 1407 (1981).

    Article  CAS  Google Scholar 

  4. J.L. Demenet, Thèse d’etat, Université de Poitiers (UFR Sciences fondamentales et appliquees), No 457 (1987).

    Google Scholar 

  5. J.L. Demenet, P. Boivin, and J. Rabier, in International Symposium on Structure and Properties of Dislocations in Semiconductors, edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw (Inst. Phys. Conf. Ser. 104, Institute of Physics, Bristol, U.K. 1989), pp. 415–420.

    Google Scholar 

  6. T. Suzuki, T. Nishisako, T. Taru, and T. Yasutomi, Philos. Mag. Lett. 77, 173 (1998).

    Article  CAS  Google Scholar 

  7. T. Suzuki, T. Yasutomi, T. Tokuoka, and I. Yonenaga, Philos. Mag. A 79, 2637 (1999).

    Article  CAS  Google Scholar 

  8. T. Suzuki, T. Yasutomi, T. Tokuoka, and I. Yonenaga, Phys. Status Solidi A 171, 47 (1999).

    Article  CAS  Google Scholar 

  9. K. Edagawa, H. Koizumi, Y. Kamimura, and T. Suzuki, Philos. Mag. A 80, 2591 (2000).

    Article  CAS  Google Scholar 

  10. A.V. Samant and P. Pirouz, Int. J. Refractory Metals and Hard Materials 16, 277 (1998).

    Article  CAS  Google Scholar 

  11. A.V. Samant, W.L. Zhou, and P. Pirouz, Phys. Status Solidi A 166, 155 (1998).

    Article  CAS  Google Scholar 

  12. A.V. Samant, M.H. Hong, and P. Pirouz, Phys. Status Solidi A 222, 75 (2000).

    Article  CAS  Google Scholar 

  13. J-L. Demenet, M.H. Hong, and P. Pirouz, Scripta Mater. 43, 865 (2000).

    Article  CAS  Google Scholar 

  14. J. Rabier, P. Cordier, J-L. Demenet, H. Garem, Mater. Sci. Eng. A 309–310, 74 (2001).

    Article  Google Scholar 

  15. P. Pirouz, A.V. Samant, M.H. Hong, A. Moulin, L.P. Kubin, J. Mater. Res. 14, 2783 (1999).

    Article  CAS  Google Scholar 

  16. P. Pirouz, A.V. Samant, M.H. Hong, A. Moulin, L.P. Kubin, in Microscopy of Semiconducting Materials, edited by A.G. Cullis, R. Beanland (Inst. Phys. Conf. Ser. No. 164, Institute of Physics, Bristol, U.K., 1999), pp. 61–66.

    Google Scholar 

  17. P. Pirouz, J.L. Demenet, and M.H. Hong, Philos. Mag. A 85, 1207 (2001).

    Article  Google Scholar 

  18. H.M. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, S.G. Müller, V. Tsvetkov, and C.H. Carter, Jr., Mater. Sci. Forum 338–342, 3 (2000).

    Article  Google Scholar 

  19. J. Samuels, D. Phil. Thesis, University of Oxford, Oxford, U.K. (1987).

  20. N. Ohtani, M. Katsuno, T. Fujimoto, T. Aigo, and H. Yahiro, in Silicon Carbide and Related Materials 2001, edited by S. Yoshida, S. Nishino, H. Harima, and T. Kimoto (Trans Tech Publications, Zurich, Switzerland), Materials Science Forum 389393, pp. 99–102 (2002).

    Google Scholar 

  21. P. Pirouz, Philos. Mag. A 78, 727 (1998).

    Article  CAS  Google Scholar 

  22. I.J. McColm, Ceramic Hardness (Plenum Press, New York, 1990).

    Book  Google Scholar 

  23. C. St. John, Philos. Mag. 32, 1193 (1975).

    Article  Google Scholar 

  24. M. Brede and P. Haasen, Acta Metall. 36, 2003 (1988).

    Article  CAS  Google Scholar 

  25. G. Michot, Cryst. Prop. Prep. 17–18, 55 (1988).

    Google Scholar 

  26. G. Michot, A. George, A. Chabli-Brenac, E. Molva, Scripta Metall. 22, 1043 (1988).

    Article  CAS  Google Scholar 

  27. P. Haasen, M. Brede, and T. Zhang, in Structure and Properties of Dislocations in Semiconductors 1989, edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw (Inst. Phys. Conf. Ser. No. 104, Institute of Physics, Bristol, U.K., 1989), pp. 361–372.

    Google Scholar 

  28. P.B. Hirsch, S.G. Roberts, J. Samuels, and P.D. Warren, in International Symposium on Structure and Properties of Dislocations in Semiconductors, edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw, (Inst. Phys. Conf. Ser. 104, Institute of Physics, Bristol, U.K., 1989), pp. 373–384.

    Google Scholar 

  29. P.B. Hirsch, S.G. Roberts, and J. Samuels, Proc. R. Soc. London A 421, 25 (1989).

    Article  CAS  Google Scholar 

  30. K. Maeda and S. Fujita, in Lattice Defects in Ceramics, edited by S. Takeuchi and T. Suzuki (Jpn. J. Appl. Phys.—Series 2: Tokyo, 1989), pp. 25–31.

    Google Scholar 

  31. P.B. Hirsch and S.G. Roberts, Philos. Mag. A 64, 55 (1991).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, 44106-7204, Cleveland, Ohio, USA

    Ming Zhang & P. Pirouz

  2. Cree, Inc., 4600 Silicon Drive, 27703, Durham, North Carolina, USA

    H. M. Hobgood

  3. Laboratoire de Metallurgie Physique, Centre National de Recherche Scientifique (CNRS), SP2MI, 86962, Futuroscope, Cedex, France

    J. L. Demenet

Authors
  1. Ming Zhang
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  2. H. M. Hobgood
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  3. J. L. Demenet
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  4. P. Pirouz
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Correspondence to Ming Zhang.

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Zhang, M., Hobgood, H.M., Demenet, J.L. et al. Transition from brittle fracture to ductile behavior in 4H–SiC. Journal of Materials Research 18, 1087–1095 (2003). https://doi.org/10.1557/JMR.2003.0150

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  • DOI: https://doi.org/10.1557/JMR.2003.0150

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