Abstract
The crystallographic thermal expansion coefficients of Ti5Si3 from 20 to 1000 °C as a function of B, C, N, O, or Ge content were measured by high-temperature x-ray diffraction using synchrotron sources at Cornell University (Cornell High Energy Synchrotron Source; CHESS) and Argonne National Laboratory (Advanced Photon Source; APS). Whereas the ratio of the thermal expansion coefficients along the c and a axes was approximately 3 for pure Ti5Si3, this ratio decreased to about 2 when B, C, or N atoms were added. Additions of O and Ge were less efficient at reducing this thermal expansion anisotropy. The extent by which the thermal expansion was changed when B, C, N, or O atoms were added to Ti5Si3 correlated with their expected effect on bonding in Ti5Si3.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A.J. Thom and M. Akinc, in Advanced Ceramics for Structural and Tribological Applications, edited by H.M. Hawthorne and T. Troczynski (Metallurgical Society of Canadian Institute of Mining, Metallurgy and Petroleum International Symposium Proceedings, Vancouver, BC, Canada, 1995), p. 619.
L. Zhang and J. Wu, Scripta Mater. 38, 307 (1998).
Y. Ikarashi, K. Ishizaki, T. Nagai, Y. Hashizuka, and Y. Kondo, Intermetallics 4, 141 (1996).
A.J. Thom, M. Akinc, O.B. Cavin, and C.R. Hubbard, J. Mater. Sci. Lett. 13, 1657 (1994).
T. Nakashima and Y. Umakoshi, Philos. Mag. Lett. 66, 317 (1992).
A.J. Thom, V.G. Young, and M. Akinc, J. Alloys Compds. 296, 59 (2000).
J.J. Williams, M.J. Kramer, M. Akinc and S.K. Malik, J. Mater. Res. 15, 99–335 (2000).
Y. Kim, A.J. Thom, and M. Akinc, in Processing and Fabrication of Advanced Materials for High Temperature Applications–II, edited by T.S. Srivatsan and V.A. Ravi (The Minerals, Metals and Materials Society Symposium Proceedings, Warrendale, PA, 1992), p. 189.
L. Margulies, M.J. Kramer, J.J. Williams, E.M. Deters, R.W. McCallum, D.R. Haeffner, J.C. Lang, S. Kycia, and A.I. Goldman, in Applications of Synchrotron Radiation Techniques to Materials Science IV, edited by S.M. Mini, S.R. Stock, D.L. Perry, and L.J. Terminello (Mater. Res. Soc. Symp. Proc. 524, Warrendale, PA, 1998), p. 139.
L. Margulies, M.J. Kramer, R.W. McCallum, S. Kycia, D.R. Haeffner, J.C. Lang, and A.I. Goldman, Rev. Sci. Instrum. 70, 3554 (1999).
D.E. Appleman and H.T. Evans, U.S. National Technical Information Service, Document No. PB2-16188 (1973).
Carbide, Nitride and Boride Synthesis and Processing, edited by A.W. Weimer (Chapman and Hall, London, 1997), p. 646.
Z. Hashin, J. Mech. Phys. Solids 32, 149 (1984).
R. Mitra, Metall. Mater. Trans. A 29, 1629 (1998).
R. Rosenkranz, G. Frommeyer, and W. Smarsly, Mater. Sci. Eng., A 152, 288 (1992).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Williams, J.J., Kramer, M.J. & Akinc, M. Thermal expansion of Ti5Si3 with Ge, B, C, N, or O additions. Journal of Materials Research 15, 1780–1785 (2000). https://doi.org/10.1557/JMR.2000.0257
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.2000.0257