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On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors

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Abstract

Recent deformation experiments on semiconductors have shown the occurrence of a break in the variation of the critical resolved shear stress of the crystal as a function of temperature. These and many other examples in the literature evidence a critical temperature at which a transition occurs in the deformation mechanism of the crystal. In this paper, the occurrence of a similar transition in two polytypes of SiC is reported and correlated to the microstructure of the deformed crystals investigated by transmission electron microscopy, which shows evidence for partial dislocations carrying the deformation at high stresses and low temperatures. Based on these results and data in the literature, the explanation is generalized to other semiconductors and a possible relationship to their brittle–ductile transition is proposed.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio, 44106-7204, USA

    P. Pirouz, A. V. Samant & M. H. Hong

  2. LEM, CNRS-ONERA, B.P. 72, 29 Av. de la Division Leclerc, Châtillon Cedex, 92322, France

    A. Moulin & L. P. Kubin

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  1. P. Pirouz
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  2. A. V. Samant
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  3. M. H. Hong
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  4. A. Moulin
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  5. L. P. Kubin
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Correspondence to P. Pirouz.

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Pirouz, P., Samant, A.V., Hong, M.H. et al. On temperature dependence of deformation mechanism and the brittle–ductile transition in semiconductors. Journal of Materials Research 14, 2783–2793 (1999). https://doi.org/10.1557/JMR.1999.0372

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