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High-resolution x-ray diffraction study of In0.25Ga0.75Sb/InAs superlattice

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Abstract

An In0.25Ga0.75Sb/InAs strained-layer superlattice, grown by molecular-beam epitaxy (MBE) on a GaSb[001] substrate, has been characterized by four-circle x-ray diffractometry. This system, proposed by Maliot and Smith for ir detection application, is challenging because of the two group V species and the likelihood of cross-incorporation of the different elements during growth, leading possibly to interdiffusion and thus, to a more diffuse interface. High-resolution x-ray diffraction (XRD) profiles were obtained about several reciprocal lattice points in order to extract a reliable set of structural parameters. The profiles were then successfully modeled by computer simulation. The presence of many sharp higher-order satellite reflections in the XRD profiles is a measure of the high quality of the superlattices. The normal and lateral structural coherence was also measured and will be discussed.

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Author notes

  1. A. Vigliante

    Present address: Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, Stuttgart, D-70569, Germany

  2. H. Homma

    Present address: Hyogo University, 942-1 Shimokume, Yashiro, Hyogo, 673-13, Japan

Authors and Affiliations

  1. Department of Physics, University of Houston, Houston, Texas, 77204-5506, USA

    A. Vigliante, H. Homma, J. T. Zborowski, T. D. Golding & S. C. Moss

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  1. A. Vigliante
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  2. H. Homma
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  3. J. T. Zborowski
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  4. T. D. Golding
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  5. S. C. Moss
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Vigliante, A., Homma, H., Zborowski, J.T. et al. High-resolution x-ray diffraction study of In0.25Ga0.75Sb/InAs superlattice. Journal of Materials Research 14, 1744–1751 (1999). https://doi.org/10.1557/JMR.1999.0236

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  • DOI: https://doi.org/10.1557/JMR.1999.0236

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