Abstract
High-quality single crystals of 6H–SiC have been indented at 1170 °C in vacuum. A TEM study of the indented regions shows that a 6H → 3C polytypic transformation has occurred, further confirming that this phase transformation can be induced by an applied stress.
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R.F. Davis, G. Keiner, M. Shur, J.W. Palmour, and J.A. Edmund, Proc. IEEE 79, 677 (1991).
L.S. Ramsdell, Am. Mineralogist 32, 64 (1947).
V. Heine, C. Cheng, G.E. Engel, and R.J. Needs, in Wide Band Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), pp. 507–518.
Y. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1978).
S. Nishino, J.A. Powell, and H.A. Will, Appl. Phys. Lett. 42, 460 (1983).
H.S. Kong, J.T. Glass, and R.F. Davis, Appl. Phys. Lett. 49, 1074 (1986).
H.S. Kong, J.T. Glass, and R.F. Davis, J. Appl. Phys. 64, 2672 (1988).
N. W. Jepps and T. F. Page, in Progress in Crystal Growth and Characterization, edited by P. Krishna (Pergamon Press, Oxford, 1983), Vol. 7, pp. 256–306.
A. R. Kieffer, P. Ettmayer, E. Gugel, and A. Schmidt, Mater. Res. Bull. IV, S153-166 (1969).
N.W. Jepps and T.F. Page, J. Am. Ceram. Soc. 64, C-177-178 (1981).
W. F. Knippenberg and G. Verspui, Mater. Res. Bull. IV, S44–56 (1969).
M.I. Sokhor, V.G. Kondakov, and L.I. Fel’dgun, Sov. Phys. Dokl. 12, 749–751 (1968).
E.D. Whitney and P.T.B. Shaffer, High Temp.-High Press. 1, 107–110 (1969).
T. F. Page, G. R. Sawyer, O. O. Adewoye, and J. J. Wert, Proc. Br. Ceram. Soc. 26, 193–208 (1978).
J. W. Yang, T. Suzuki, P. Pirouz, J. A. Powell, and T. Iseki, in Wide Band Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa (Mater. Res. Soc. Symp. Proc. 242, Pittsburgh, PA, 1992), pp. 531–536.
P. Pirouz, Inst. Phys. Conf. Ser. No. 104, 49 (1989).
H. Suematsu, T. Suzuki, T. Iseki, and T. Mori, J. Am. Ceram. Soc. 74, 173 (1991).
K. Maeda, K. Suzuki, S. Fujita, M. Ichihara, and S. Hyodo, Philos. Mag. A 57, 573 (1988).
P. Pirouz and J.W. Yang, Ultramicroscopy 51, 189 (1993).
P. B. Hirsch, P. Pirouz, S. G. Roberts, and P. D. Warren, Philos. Mag. B 52, 759 (1985).
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Yang, J.W., Pirouz, P. The α → β polytypic transformation in high-temperature indented SiC. Journal of Materials Research 8, 2902–2907 (1993). https://doi.org/10.1557/JMR.1993.2902
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DOI: https://doi.org/10.1557/JMR.1993.2902