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Reaction study of cobalt and silicon nitride

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Abstract

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed.

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Authors and Affiliations

  1. IBM Semiconductor Research Development Center, New York, 12533, Hopewell Junction, USA

    Tue Nguyen, Herbert L. Ho & David E. Kotecki

  2. Center for X-ray Optics, Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California, California, 94720, Berkeley, USA

    Tai D. Nguyen

Authors
  1. Tue Nguyen
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  2. Herbert L. Ho
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  3. David E. Kotecki
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  4. Tai D. Nguyen
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Nguyen, T., Ho, H.L., Kotecki, D.E. et al. Reaction study of cobalt and silicon nitride. Journal of Materials Research 8, 2354–2361 (1993). https://doi.org/10.1557/JMR.1993.2354

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  • DOI: https://doi.org/10.1557/JMR.1993.2354

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