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Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications

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Abstract

Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.

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Authors and Affiliations

  1. Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, California, 94720, Berkeley, USA

    J. L. Hurd, D. L. Perry, B. T. Lee, K. M. Yu, E. D. Bourret & E. E. Haller

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  1. J. L. Hurd
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  2. D. L. Perry
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  3. B. T. Lee
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  4. K. M. Yu
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  5. E. D. Bourret
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  6. E. E. Haller
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Hurd, J.L., Perry, D.L., Lee, B.T. et al. Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications. Journal of Materials Research 4, 350–354 (1989). https://doi.org/10.1557/JMR.1989.0350

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  • DOI: https://doi.org/10.1557/JMR.1989.0350

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