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STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

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Abstract

Scanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

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Authors and Affiliations

  1. Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL, 32826, U.S.A.

    Jesse E. Thompson, Brandon T. Blue, Darian Smalley, Fernand Torres-Davila, Laurene Tetard & Masahiro Ishigami

  2. Naval Research Laboratory, Washington, D.C., 20375, U.S.A.

    Jeremy T. Robinson

Authors
  1. Jesse E. Thompson
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  2. Brandon T. Blue
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  3. Darian Smalley
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  4. Fernand Torres-Davila
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  5. Laurene Tetard
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  6. Jeremy T. Robinson
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  7. Masahiro Ishigami
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Thompson, J.E., Blue, B.T., Smalley, D. et al. STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors. MRS Advances 4, 2609–2617 (2019). https://doi.org/10.1557/adv.2019.322

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