<電子物性・デバイス>
新材料パワーデバイスの最新技術
2017 年 137 巻 1 号 p. 13-19
詳細
2017 年 137 巻 1 号 p. 13-19
Efficiency and controllability of power electronics is highly affected by power device performances, such as low on-resistance and high speed switching. In recent years, SiC, GaN, and diamond are expected to be used for making superior power devices, since Si device performance is approaching the material limit. In this paper, we review recent advances of the new material devices, by picking up some papers presented in power-device related conferences and journals.
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