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Licensed Unlicensed Requires Authentication Published by De Gruyter May 9, 2008

Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations

  • J. Branlard , S. Aboud , P. Osuch , S. Goodnick and M. Saraniti
From the journal Monte Carlo Methods and Applications
https://doi.org/10.1515/mcma.2004.10.3-4.227

The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.

Keywords: particle-based simulation; full-band; Fourier Decomposition; small-signal analysis; GaAs MESFETs; SOI MOSFETs
Corresponding author: Julien Branlard, email:
Published Online: 2008-05-09
Published in Print: 2004-12

© de Gruyter 2004

From the journal
Monte Carlo Methods and Applications
Monte Carlo Methods and Applications
Volume 10 Issue 3-4
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