Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Regular Papers
Preparation of DC-bias-free (Ba, Sr)TiO3-Bi(Mg, Ti)O3-NaNbO3 Ceramics with Reduced Temperature Dependent Dielectric Properties
Haruki MaruyamaShintaro UenoKouichi NakashimaIchiro FujiiSatoshi Wada
Author information
JOURNAL FREE ACCESS

2015 Volume 40 Issue 4 Pages 409-412

Details
Abstract

(1-2x)(Ba0.8Sr0.2)TiO3-x(Bi(Mg0.5Ti0.5)O3-NaNbO3) (x = 0 - 0.33) ceramics were prepared by solid-state synthesis and the dielectric properties were investigated. At x = 0, the ceramics showed a ferroelectric behavior, and thus the dielectric properties were strongly dependent on electric field and temperature. With increasing x, the ferroelectric behavior became weak, and the electric field and temperature dependence became smaller. For the ceramics with x = 0.25 and 0.33, the dc bias and temperature dependence of the dielectric constant was small, that is, the dielectric constant was 310 – 573 under dc bias fields of 0 - 180 kV/cm and temperatures of 25 - 400 ˚C. Moreover, at x = 0.33, the grain size dependence was also small; the dielectric constant at 25 ˚C and no dc bias was 481 – 561 at grains sizes of 1.0 – 3.2 μm. These stable dielectric properties indicated that the ceramics could be candidate materials for high temperature, dc-bias-free capacitor applications.

Content from these authors
© 2015 The Materials Research Society of Japan
Previous article Next article
feedback
Top