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20Gbps silicon lateral MOS-Capacitor electro-optic modulator

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Abstract

This work presents an experimental demonstration of a 500µm long MZI carrier accumulation type modulator based on lateral MOS-capacitor integration on a silicon platform. A modulation efficiency (VπLπ) of 1.53V-cm, moderate modulation speed of 20Gbit-s−1 and extinction ratio of 3.65dB have been obtained.

© 2018 The Author(s)

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