Determination of Carrier Concentrations in P-GaSb/n-InGaAsSb Type II Misaligned Heterojunctions by the Conductivity-Magnetic Field Dependence
We present results in studying narrow-gap misaligned heterojunctions based on InxGa1–x
As
y
Sb1–y/GaSb solid solutions with a composition close to InAs (x ≥ 0.80, E
g = 0.26 eV at T
= 300 K). Unusual asymmetric electrical properties of the heterostructures (N–n, P–p, N–p and P–n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure
and diode-like I–V characteristics of the N–p, N–n and P–p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P–n structure with ohmic behavior
was determined by the conductivity-magnetic field dependence.
Keywords: CARRIER CONCENTRATION; ENERGY BAND DIAGRAM; HETEROSTRUCTURE
Document Type: Research Article
Publication date: 01 January 2013
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