Investigation on the Characterization, Growth Mechanism and THz Generation of DAST Crystals
4-N,N-diethylamino-4′-N′-methyl-stilbazolium tosylate (DAST) crystals were grown by slop nucleation method (SNM) in the experiments, achieving DAST crystal with the dimension of up to 5 × 5 × 2 mm3. The as-grown DAST crystals were
characterized by powder X-ray diffraction (XRD) and Nuclear Magnetic Resonance (NMR). The (001) face morphology of DAST was analyzed, and the growth layers and hillocks were observed on the crystal surface. Moreover, the continuously tunable THz waves ranging from 1.16∼16.71 THz were generated
from DAST crystal with 1 mm using the difference frequency method. The maximum THz output energy of 27.4 nJ was received at 3.8 THz.
Keywords: DAST CRYSTAL; GROWTH MECHANISM; NMR; THZ WAVE GENERATION; XRD
Document Type: Research Article
Publication date: 01 February 2015
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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