A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile
The paper presents a threshold voltage model of short-channel double-gate (DG) MOSFETs with a Gaussian doping profile in the vertical direction of the channel. The classical definition of the threshold voltage of conventional MOSFETs has been modified to obtain the doping dependent
threshold voltage of the present device with the peak channel doping ranging from 1014 cm−3 to 1019 cm−3. The threshold voltage dependence on the channel length, silicon channel thickness and gate oxide thickness are also presented. The
effects of varying doping peak position in the channel along with the effect of the variation of straggle (σ
p
) on the threshold voltage have also been investigated. The results are well matched with the simulation results obtained by using the commercially available
2D ATLAS™ device simulator.
Keywords: DG MOSFET; GAUSSIAN DOPING; SHORT-CHANNEL EFFECTS; THRESHOLD VOLTAGE; VIRTUAL CATHODE
Document Type: Research Article
Publication date: 01 June 2011
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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