Growing Properties of Carbon Nanowalls According to the Hydrogen Gas Ratio
In this study, the growth characteristics of carbon nanowalls (CNWs), which are applied to many devices because of their high aspect ratio and excellent electrical characteristics thanks to their two-dimensional structure, were confirmed by changing the ratio of methane (CH4)
and hydrogen (H2) therein. In many studies, CNWs were grown using various chemical vapor deposition (CVD) or sputtering methods, with a mixture of CH4 and H2 or argon (Ar) gas. To find the suitable rate, 25 sccm CH4, which is used as the source gas,
was first injected into the chamber, and the characteristics were confirmed by changing the amount of H2 gas from 0 to 50 sccm. Ultrasonically cleaned Si wafer was used as the substrate, and the CNW was grown for 10 minutes at microwave power (1300 W, 600°C) using microwave-plasma-enhanced
CVD (MPECVD).
Keywords: CH4:H2 Gas Ratio; Carbon Nanomaterials; Carbon Nanowall; Microwave PECVD
Document Type: Research Article
Affiliations: 1: Department of Electrical Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea 2: Department of Electrical System Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea 3: Department of Advanced Materials Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea
Publication date: 01 November 2020
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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