Skip to main content
Home / Journal of Nanoscience and Nanotechnology, Volume 18, Number 9

Defect States in InP/InGaAs/InP Heterostructures by Current–Voltage Characteristics and Deep Level Transient Spectroscopy

Buy Article:

$107.14 + tax (Refund Policy)

Authors: Vu, Thi Kim Oanh 1 ; Lee, Kyoung Su 1 ; Lee, Sang Jun 2 ; Kim, Eun Kyu 1 ; 

Source: Journal of Nanoscience and Nanotechnology, Volume 18, Number 9, September 2018, pp. 6239-6243(5)

Publisher: American Scientific Publishers

DOI: https://doi.org/10.1166/jnn.2018.15625

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current– voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

Keywords: Defect States; InGaAs/InP; Metalorganic Chemical Vapor Deposition

Document Type: Research Article

Affiliations: 1: Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Korea 2: Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 34113, Korea

Publication date: 01 September 2018

More about this publication?
  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
  • Editorial Board
  • Information for Authors
  • Subscribe to this Title
  • Terms & Conditions
  • Ingenta Connect is not responsible for the content or availability of external websites

Share Content

  • Access Key
  • Free content
  • Partial Free content
  • New content
  • Open access content
  • Partial Open access content
  • Subscribed content
  • Partial Subscribed content
  • Free trial content