Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell
The CuIn
X
Ga1−
X
Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive
oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of
the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J
sc of 18.73 mA/cm2.
Keywords: Film Thickness; Solution-Based CIGS Layer; ZnO Thin Film
Document Type: Research Article
Affiliations: 1: College of Information and Communication Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, Republic of Korea 2: Department of Chemistry and Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746, Republic of Korea
Publication date: 01 May 2016
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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