MgZnO Nanowires Based Deep Ultraviolet Heterojunction Light Emitting Diodes

Vertically aligned Mg alloyed ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnace. Structural analysis found that the MgZnO nanowires are with single crystalline without phase separations. The atomic ratio of Mg/O in the nanowire was determined to be ∼15%. Photoluminescence spectra show that the band gap of ZnO nanowire was tuned to ∼3.6 eV due to Mg incorporation. N-type MgZnO nanowires/p-type GaN was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yielded ultraviolet emission peaks, which includes a deep ultraviolet at ∼340 nm. The results suggest that successful Mg alloying in ZnO nanowires was achieved and is promising for deep ultraviolet devices.