Diffusion in Si x Ge1−x /Si Nanowire Heterostructures
Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 °C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 °C to 800
°C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. The compositional profiles were modeled by a limited-source diffusion model to extract temperature-dependent diffusion coefficients. The Ge diffusion coefficients
followed an Arrhenius relationship with an activation energy of 0.622 ± 0.050 eV. This rather low activation energy barrier is similar to the previously reported activation energy barrier of 0.67 eV for Ge surface diffusion on Si, suggesting that surface diffusion may dominate in nanowires
at this length scale.
Keywords: GROWTH; NANOWIRE HETEROSTRUCTURES; PROPERTIES
Document Type: Short Communication
Publication date: 01 February 2007
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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