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Home / Journal of Nanoscience and Nanotechnology, Volume 16, Number 6

Semiconductor Sensitized Solar Cells Based on BiVO4-Sensitized Mesoporous SnO2 Photoanodes

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Low cost, stable and visible-light-responsive bismuth vanadate (BiVO4) was used as the light absorbing material to fabricate a low bandgap oxide solar cell on mesoporous SnO2 photoanode. BiVO4 nanoparticles were grown on the mesoporous SnO2 films employing successive ionic layer adsorption and reaction process. The optimized BiVO4 solar cell shows an incident photon to current conversion efficiency of more than 60% at a wide range of visible region (350 nm–450 nm), leading to a power conversion efficiency of 0.56% at AM1.5, 100 mW· cm−2. This result provides important insights into the low cost and robust oxide solar cells.

Keywords: BiVO4; Semiconductor; Sensitizer; Solar Cells

Document Type: Research Article

Affiliations: 1: University of Science and Technology of China, Hefei 230026, P. R. China 2: Key Laboratory of Novel Thin Film Solar Cells, Institute of Applied Technology, Hefei Institutes of Physical Science Chinese Academy of Sciences, Hefei, 230031, P. R. China 3: Department of Chemical Engineering, University College London, London WC1E 7JE, UK

Publication date: 01 June 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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