Nanoscale Magnetic Regions Formed in GaN Implanted with Mn
Platelet structures with diameters less than 250 Å and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 °C. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1−x N with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of ∼250 K.
Keywords: FERROMAGNETIC BEHAVIOR; GAN; ION IMPLANTATION; NANOSCALE MAGNETIC REGIONS
Document Type: Research Article
Affiliations: 1: Department of Physics, University of Florida, Gainesville, Florida 32611, USA 2: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA 3: Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, USA 4: Consultant, Stevenson Ranch, California 91381, USA
Publication date: 01 March 2001
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