A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

In this paper, a rigorous surface potential-based core undoped symmetric Double-Gate Metal-OxideSemiconductor Field Effect Transistors (DG MOSFETs) model is derived by solving the Poisson's equation to obtain the relationship between the surface potential and applied voltage in the channel region in a self-consistent way. The drain current is then obtained from the Pao-Sah's double integral. The model consists of one set of the surface potential equations and the analytical drain current can be evaluated from the surface potentials at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the DG MOSFETs and without any simplification (e.g., by using the charge sheet assumption) or auxiliary fitting functions. The model has been verified by extensive comparisons with 2-D numerical simulation under different operation conditions with different geometry. The consistency between the model calculation and numerical simulation demonstrated the accuracy of the model.