The Chemical Deposition of Boron‐Nitrogen Films

and

© 1980 ECS - The Electrochemical Society
, , Citation A. C. Adams and C. D. Capio 1980 J. Electrochem. Soc. 127 399 DOI 10.1149/1.2129678

1945-7111/127/2/399

Abstract

Films containing boron, nitrogen, and hydrogen have been deposited at reduced pressure by reacting diborane and ammonia at 250°–600°C. Deposition rates as high as 15 nm/min (150 Å/min) have been achieved with thickness uniformities and reproducibilities better than ±3%. The films have been characterized by measuring infrared spectra, refractive index, optical absorption in the ultraviolet and visible, stress, chemical inertness, etch rates in a plasma, step coverage, and adhesion.

Export citation and abstract BibTeX RIS

10.1149/1.2129678