Abstract
The work constitutes a survey of 
reactive‐ion‐etching‐induced surface modification in silicon. The damage produced during reactive ion etching (RIE) is studied using a diverse set of techniques, such as spreading resistance, metal‐semiconductor contacts, electron spin resonance, and reflected high energy electron diffraction. The surface chemistry was also investigated through the use of Auger electron spectroscopy. Among the possible effects that could be produced by RIE (structural damage, impurity and etching ion permeation, and coating residue or film formation), the bulk of the evidence points to structural (bonding) damage with its associated positive charge, as being the dominant surface modification caused by 
, or 
etching for the process parameters used in this study. The evolution of this damage with varying etching parameters is also examined. Further, a survey of various dry processes that can be used to overcome or reverse the surface modification occurring during RIE is made. Specifically, we show that hydrogen passivation, low temperature (∼600°C for times ≳ 1h) furnace anneals, or rapid thermal anneals (1100°C for 10s) can be used to restore the properties of the RIE‐damaged silicon surface. A criterion for the efficacy of rapid thermal annealing in restoring surface properties after RIE involving other gases is postulated.